ELECTRON-DRIFT MOBILITY IN DOPED AMORPHOUS-SILICON - COMMENT

被引：1

作者：

OVERHOF, H ^{[1
]}

SILVER, M ^{[1
]}

机构：

[1] UNIV N CAROLINA,DEPT PHYS & ASTRON,CHAPEL HILL,NC 27514

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.39.10426

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：10426 / 10428

页数：3

共 18 条

[1]

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[2]

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[3]

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[4]

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[8] LOCALIZED STATES IN COMPENSATED A-SI-H [J].

MARSHALL, JM ;

STREET, RA ;

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PHYSICAL REVIEW B, 1984, 29 (04) :2331-2333

[9] ELECTRON-DRIFT MOBILITY IN AMORPHOUS SI-H [J].

MARSHALL, JM ;

STREET, RA ;

THOMPSON, MJ .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 54 (01) :51-60

[10] DISPERSIVE TRANSPORT IN AMORPHOUS SI-H [J].

OVERHOF, H .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :57-60

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