CONTROLLED GROWTH OF TIN DIOXIDE THIN-FILMS BY ATOMIC LAYER EPITAXY

Tin dioxide thin films were deposited on glass substrates by atomic layer epitaxy using SnCl4 and H2O as reactants. The growth experiments were carried out in the temperature range of 300-600 degrees C. The effect of growth parameters on the growth rate and crystal texture was studied. Spectrophotometry, X-ray diffraction, Rutherford backscattering spectroscopy, secondary ion mass spectrometry and sheet resistance measurements were used to characterize the films. The films were transparent and highly uniform with only small thickness variations. The films were polycrystalline with their crystallites having a preferred orientation, which depended on the growth temperature and film thickness.