SEMICONDUCTOR INTERNAL-REFLECTION-INTERFERENCE LASER

被引：25

作者：

CHOI, HK ^{[1
]}

WANG, S ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 07期

关键词：

D O I：

10.1063/1.93183

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：571 / 573

页数：3

共 10 条

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[8] GAAS-ALXGA1-XAS STRIP BURIED HETEROSTRUCTURE LASERS [J].

TSANG, WT ;

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IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (06) :451-469

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TSUKADA, T .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) :4899-4906

[10]

WANG S, UNPUB IEEE J QUANTUM

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