A COMPARATIVE-STUDY ON THE NOISE MEASURE OF MILLIMETER-WAVE GAAS IMPATT DIODES

被引：2

作者：

HARTH, W

BOGNER, W

GAUL, L

CLAASSEN, M

机构：

[1] Technische Universität München, 80290 München

来源：

SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 03期

关键词：

D O I：

10.1016/0038-1101(94)90008-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is theoretically and experimentally demonstrated that the small-signal noise measure of GaAs single-drift Impatt-diodes can efficiently be reduced by increasing the total width of the diode space-charge region due to shot-noise reduction and space-charge smoothing. For a total space-charge region width of 770 nm, a minimum noise-measure of 22 dB at 60 GHz is obtained. This value reaches almost the theoretical optimum noise measure of pin-avalanche diodes.

引用

页码：427 / 431

页数：5

共 15 条

[1] THE DETERMINATION OF IMPACT IONIZATION COEFFICIENTS IN (100) GALLIUM-ARSENIDE USING AVALANCHE NOISE AND PHOTOCURRENT MULTIPLICATION MEASUREMENTS [J].

BULMAN, GE ;

ROBBINS, VM ;

STILLMAN, GE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) :2454-2466

[2]

Convert G., 1971, Revue Technique Thomson-CSF, V3, P419

[3] DETERMINATION OF TUNNEL-GENERATION RATE FROM GAAS PIN-STRUCTURES [J].

GAUL, L ;

HUBER, S ;

FREYER, J ;

CLAASSEN, M .

SOLID-STATE ELECTRONICS, 1991, 34 (07) :723-726

[4]

GROTHE H, 1987, MIOP 87 WIESBADEN

[5] A SMALL-SIGNAL THEORY OF AVALANCHE NOISE IN IMPATT DIODES [J].

GUMMEL, HK ;

BLUE, JL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) :569-&

[6]

GUTTICH U, 1986, THESIS TU MUNICH

[7]

HAMILTON S, 1978, MICROWAVE J, V21, P105

[8]

Harth W., 1988, Mikrowellen Magazin, V14, P106

[9]

HARTH W, 1992, AEU-ARCH ELEKTRON UB, V46, P54

[10]

HARTH W, UNPUB FLUCTUATIONS D

← 1 2 →