PLANAR TO COLUMNAR TRANSFORMATION OF PTSI IN THE EPITAXIAL-GROWTH PROCESS OF SI/PTSI/SI(111) DOUBLE HETEROSTRUCTURES

被引：8

作者：

KUMAGAI, Y ^{[1
]}

HASEGAWA, F ^{[1
]}

PARK, K ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS JAPAN LTD,TSUKUBA RES & DEV CTR,TSUKUBA,IBARAKI 305,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 06期

关键词：

D O I：

10.1063/1.356125

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial growth of Si on PtSi(010)/Si(111) structure, which was fabricated by coevaporation of Pt and Si with the stoichiometric ratio (Pt/Si= 1/1), was carried out in a molecular beam epitaxy system. At the substrate temperature of 400-degrees-C, Si grew epitaxially on the PtSi layer and Si(111)/Ptsi(010)/Si(111) double heterostructure was obtained. On the other hand, at the substrate temperature of 600-degrees-C, the PtSi layer transformed into epitaxial columns and/or walls in the process of Si deposition and evaporated Si filled the space among the PtSi columns and/or walls epitaxially.

引用

页码：3211 / 3213

页数：3

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