RESISTIVITY STUDY OF BI2SR2CA1-XYXCU2O8 SINGLE-CRYSTALS

被引:29
作者
MANDRUS, D [1 ]
FORRO, L [1 ]
KENDZIORA, C [1 ]
MIHALY, L [1 ]
机构
[1] UNIV ZAGREB, INST PHYS, YU-41001 ZAGREB, CROATIA
关键词
D O I
10.1103/PhysRevB.45.12640
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have measured the resistivity rho(T) on a number of high-quality single crystals of Bi2Sr2-Ca1-xYxCu2O8 with x ranging from 0 to 0.50. The effects of increasing x are (1) T(c) falls sharply and disappears at x = 0.40 +/- 0.05, (2) the onset of linear behavior in rho(T) shifts to higher temperatures, (3) the high-temperature slope d(rho)(T)/dT increases, and (4) the residual resistivity rho-0 (normalized to the carrier density) satisfies Matthiessen's rule up to x = 0.40. Localization effects set in above this value.
引用
收藏
页码:12640 / 12642
页数:3
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