RESISTIVITY STUDY OF BI2SR2CA1-XYXCU2O8 SINGLE-CRYSTALS

被引：29

作者：

MANDRUS, D ^{[1
]}

FORRO, L ^{[1
]}

KENDZIORA, C ^{[1
]}

MIHALY, L ^{[1
]}

机构：

[1] UNIV ZAGREB, INST PHYS, YU-41001 ZAGREB, CROATIA

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 21期

关键词：

D O I：

10.1103/PhysRevB.45.12640

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have measured the resistivity rho(T) on a number of high-quality single crystals of Bi2Sr2-Ca1-xYxCu2O8 with x ranging from 0 to 0.50. The effects of increasing x are (1) T(c) falls sharply and disappears at x = 0.40 +/- 0.05, (2) the onset of linear behavior in rho(T) shifts to higher temperatures, (3) the high-temperature slope d(rho)(T)/dT increases, and (4) the residual resistivity rho-0 (normalized to the carrier density) satisfies Matthiessen's rule up to x = 0.40. Localization effects set in above this value.

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页码：12640 / 12642

页数：3

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