IMPROVEMENT OF INP CRYSTAL QUALITY GROWN ON GAAS SUBSTRATES AND DEVICE APPLICATIONS

被引：33
|
作者：
KIMURA, T
KIMURA, T
ISHIMURA, E
UESUGI, F
TSUGAMI, M
MIZUGUCHI, K
MUROTANI, T
机构：
[1] Optoelectronic and Microwave Devices R, D Laboratory, Mitsubishi Electric Corporation, Itami, Hyogo, 664, 4-1, Mizuhara
来源：
JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(91)90564-L
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have investigated the effect of strained-layer superlattice (SLS) buffer layers on the crystal quality of InP grown on GaAs substrates. The various SLSs such as In0.63Ga0.37As/InP, In0.73Ga0.27As/InP, In0.9Ga0.1P/InP, and GaAs/InP were tested. It is found that the optical property of InP layers grown on In0.63Ga0.37As/InP SLSs was dramatically improved. An InGaAsP/InP double heterostructure laser diode and an InGaAs PIN photodiode (PD) on InP/GaAs with an In0.63Ga0.37As/InP SLS have been fabricated. The CW threshold current of the laser at room temperature was as low as 31 mA, and the dark current of the PD was 30 nA at -10 V.
引用
收藏
页码：827 / 831
页数：5
相关论文
共 50 条
  • [1] IMPROVEMENT OF INP CRYSTAL QUALITY ON GAAS SUBSTRATES BY THERMAL CYCLIC ANNEALING
    HAYAFUJI, N
    KIMURA, T
    YOSHIDA, N
    KANENO, N
    TSUGAMI, M
    MIZUGUCHI, K
    MUROTANI, T
    IBUKI, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (10): : L1721 - L1724
  • [2] Improvement of crystal quality of thick InGaAsN layers grown on InP substrates by adding antimony
    Miura, K.
    Nagai, Y.
    Iguchi, Y.
    Okada, H.
    Kawamura, Y.
    JOURNAL OF CRYSTAL GROWTH, 2007, 301 : 575 - 578
  • [3] LOW-PRESSURE OMCVD GROWTH OF DEVICE QUALITY GAAS ON INP SUBSTRATES FOR OEIC APPLICATIONS
    BHAT, R
    LO, Y
    CANEAU, C
    HWANG, DM
    ZAH, C
    KOZA, MA
    JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 939 - 939
  • [4] LOW-PRESSURE OMCVD GROWTH OF DEVICE QUALITY GAAS ON INP SUBSTRATES FOR OEIC APPLICATIONS
    BHAT, R
    KOZA, MA
    LO, YH
    HWANG, DM
    SKROMME, BJ
    CANEAU, C
    ZAH, CE
    INSTITUTE OF PHYSICS CONFERENCE SERIES <D>, 1989, (96): : 177 - 182
  • [5] LOW-PRESSURE OMCVD GROWTH OF DEVICE QUALITY GAAS ON INP SUBSTRATES FOR OEIC APPLICATIONS
    BHAT, R
    KOZA, MA
    LO, YH
    HWANG, DM
    SKROMME, BJ
    CANEAU, C
    ZAH, CE
    GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988, 1989, : 177 - 182
  • [6] MOVPE INGAAS/INP GROWN DIRECTLY ON GAAS SUBSTRATES
    DENTAI, AG
    JOYNER, CH
    TELL, B
    ZYSKIND, JL
    SULHOFF, JW
    FERGUSON, JF
    CENTANNI, JC
    CHU, SNG
    CHENG, CL
    ELECTRONICS LETTERS, 1986, 22 (22) : 1186 - 1188
  • [7] 1D nanostructures grown on GaAs and InP substrates
    Department of Electronics Technology, BME, Building V2, H-1111 Budapest Goldmann Gy. t. 3, Hungary
    Period Polytech Electr Eng, 2008, 1-2 (111-115):
  • [8] High quality InP substrates grown by the VCZ method
    Yabuhara, Y
    Oida, K
    Hosokawa, Y
    Nakai, R
    Aoyagi, K
    Iguchi, Y
    Iwasaki, T
    1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 35 - 38
  • [9] OPTICAL-QUALITY IMPROVEMENT OF MOVPE GROWN GAALAS/GAAS DOUBLE HETEROSTRUCTURES ON SILICON SUBSTRATES
    DRAIDIA, N
    AZOULAY, R
    DUGRAND, L
    PAPADOPOULO, AC
    GAO, Y
    SERMAGE, B
    OSSART, P
    MEDDEB, J
    JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 483 - 488
  • [10] High Quality GaAs Nanowires Grown on Glass Substrates
    Dhaka, Veer
    Haggren, Tuomas
    Jussila, Henri
    Jiang, Hua
    Kauppinen, Esko
    Huhtio, Teppo
    Sopanen, Markku
    Lipsanen, Harri
    NANO LETTERS, 2012, 12 (04) : 1912 - 1918
12345