ENHANCEMENT OF LIGHT-INDUCED DEGRADATION IN HYDROGENATED AMORPHOUS-SILICON DUE TO CARBON IMPURITIES

被引：10
作者：
UNOLD, T
COHEN, JD
机构：
来源：
APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 07期
关键词：
D O I：
10.1063/1.104527
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of carbon impurities in a-Si:H samples at low concentrations (1 at. % to less than 0.1 at. %) has been investigated using capacitance profiling methods on samples whose carbon content was intentionally modulated spatially during growth. We have found a strong correlation between the secondary-ion mass spectroscopy determined carbon content and the susceptibility of these samples to light-induced metastable defect creation. No correlation was found with respect to the variation in total hydrogen content of these samples.
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页码：723 / 725
页数：3
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