BI-SUBSTITUTED GARNET-FILMS CRYSTALLIZED DURING RF SPUTTERING FOR M-O MEMORY

被引：23

作者：

GOMI, M

OKAZAKI, T

ABE, M

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology, Ookayuma, Meguro-ku

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1987年 / 23卷 / 05期

关键词：

D O I：

10.1109/TMAG.1987.1065444

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have successfully got Bi-substituted garnet films on glass substrates by in situ sputter growth above 500 °C. When sputter crystallized just above 500 ·C, the films had a good surface smoothness and a high crystallographic quality as compared to the post-an-nealed film. The films had a preferred crystal orientation of (220) and (444) planes parallel to the film surface when grown under low gass pressure less than 8 mTorr. The magnetic and magneto-optic properties of these films were studied and the static M-O recording was performed. © 1987 IEEE

引用

页码：2967 / 2969

页数：3

共 4 条

[1] RF-SPUTTERED FILMS OF BISUBSTITUTED GARNET FOR MAGNETOOPTICAL MEMORY [J].