THE EFFECTS OF LOW-ANGLE OFF-AXIS SUBSTRATE ORIENTATION ON MOSFET PERFORMANCE AND RELIABILITY

被引：29
作者：
CHUNG, JE
CHEN, J
KO, PK
HU, CM
LEVI, M
机构：
[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
[2] ROME AIR DEV CTR,GRIFFISS AFB,NY 13441
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 03期
关键词：
D O I：
10.1109/16.75175
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the effects of low-angle off-axis substrate orientation on MOSFET performance and reliability are examined. When [100] wafers are tilted off axis from 0-degrees to 8-degrees around the [011] axis, two principal effects are observed. First, for current flow normal to the axis of rotation, inversion-layer mobility is lower than for current flow in the parallel direction. This mobility difference is due to anisotropy in the inversion-layer effective mass as well as increased surface roughness in the normal compared with the parallel direction. Second, as the substrate is rotated off axis, the susceptibility of gate oxide to defect-related breakdown is enhanced. The off-axis surface exhibits increased surface roughness, which promotes nonuniform oxidation and can significantly degrade VLSI reliability.
引用
收藏
页码：627 / 633
页数：7
相关论文
共 29 条
[1]   FULLY SYMMETRIC COOLED CMOS ON (110) PLANE [J].
AOKI, M ;
YANO, K ;
MASUHARA, T ;
SHIMOHIGASHI, K .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (08) :1429-1433
[2]   THE INFLUENCE OF TILTED SOURCE DRAIN IMPLANTS ON HIGH-FIELD EFFECTS IN SUBMICROMETER MOSFETS [J].
BAKER, FK ;
PFIESTER, JR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) :2119-2124
[3]   A 2-STEP OXIDATION PROCESS TO IMPROVE THE ELECTRICAL BREAKDOWN PROPERTIES OF THIN OXIDES [J].
BHATTACHARYYA, A ;
VORST, C ;
CARIM, AH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) :1900-1903
[4]   THE EVOLUTION OF SI/SIO2 INTERFACE ROUGHNESS [J].
CARIM, AH ;
SINCLAIR, R .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (03) :741-746
[5]   ROLE OF SCATTERING BY SURFACE-ROUGHNESS IN SILICON INVERSION LAYERS [J].
CHENG, YC ;
SULLIVAN, EA .
SURFACE SCIENCE, 1973, 34 (03) :717-731
[6]   A NEW AC TECHNIQUE FOR ACCURATE DETERMINATION OF CHANNEL CHARGE AND MOBILITY IN VERY THIN GATE MOSFETS [J].
CHOW, PMD ;
WANG, KL .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (09) :1299-1304
[7]  
Chung J., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P633, DOI 10.1109/IEDM.1989.74360
[8]   VELOCITY OF SURFACE CARRIERS IN INVERSION-LAYERS ON SILICON [J].
COEN, RW ;
MULLER, RS .
SOLID-STATE ELECTRONICS, 1980, 23 (01) :35-40
[9]   MATERIAL PROPERTIES OF HIGH-QUALITY GAAS EPITAXIAL LAYERS GROWN ON SI SUBSTRATES [J].
FISCHER, R ;
MORKOC, H ;
NEUMANN, DA ;
ZABEL, H ;
CHOI, C ;
OTSUKA, N ;
LONGERBONE, M ;
ERICKSON, LP .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) :1640-1647
[10]  
GAMBINO J, 1988, ESC, P390
123