共 50 条
- [21] AVALANCHE PHOTODIODES BASED ON EPITAXIAL LAYERS OF CDXHG1-XTE CRYSTALS PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1985, 11 (22): : 1359 - 1362
- [22] Photoelectrical properties of CdxHg1-xTe epitaxial layers irradiated by nanosecond laser pulses Semicond Sci Technol, 1 (61-64):
- [23] THE TUBULAR STRUCTURE OF GROWTH DEFECTS OF CDXHG1-XTE EPITAXIAL LAYERS KRISTALLOGRAFIYA, 1982, 27 (02): : 400 - 402
- [26] Dependence of compositional profile and structural perfection of CdxHg1-xTe graded-gap films from its growing conditions FOURTH INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE AND MATERIAL PROPERTIES FOR INFRARED OPTOELECTRONICS, 1999, 3890 : 523 - 527
- [27] STUDIES OF CDXHG1-XTE EPITAXIAL FILMS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (01): : 26 - 28
- [28] OPTICAL-PROPERTIES OF EPITAXIAL CDXHG1-XTE FILMS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (03): : 249 - 252
- [29] EPITAXIAL-GROWTH OF CDXHG1-XTE JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (08) : 1259 - 1260