ELECTROLUMINESCENCES OF ZN-DIFFUSED GAP DIODES AND THEIR ELECTRICAL CHARACTERISTICS

被引：7
作者：
MIYAUCHI, T
SONOMURA, H
YAMAMOTO, N
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1969年 / 8卷 / 06期
关键词：
D O I：
10.1143/JJAP.8.711
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：711 / &
相关论文
共 50 条
[21]   Structural characterisation of vapour Zn-diffused waveguides in lithium niobate [J].
Fedorov, VA ;
Korkishko, YN ;
Vereda, F ;
Lifante, G ;
Cusso, F .
JOURNAL OF CRYSTAL GROWTH, 1998, 194 (01) :94-100
[22]   Optical properties of Cd- and Zn-diffused layers in InP [J].
Si, SK ;
Kim, SJ ;
Moon, Y ;
Yoon, E ;
Yoo, JB .
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1998, 32 (02) :162-165
[23]   Optical characterization of vapor Zn-diffused waveguides in lithium niobate [J].
Schiller, F ;
Herreros, B ;
Lifante, G .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION, 1997, 14 (02) :425-429
[24]   Characterization of index profiles of Zn-diffused LiNbO3 waveguides [J].
Nevado, R ;
Lifante, G .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION, 1999, 16 (10) :2574-2580
[25]   DISTRIBUTION OF RADIATIVE RECOMBINATION EFFICIENCY IN Zn-DIFFUSED GaAs LAYERS. [J].
Darek, Bogdan ;
Gawronska, Ewa ;
Szymanski, Leszek .
Electron Technology (Warsaw), 1978, 11 (03) :63-72
[26]   EFFECTS OF RAPID QUENCHING ON THE IMPURITY SITE LOCATION IN ZN-DIFFUSED INP [J].
YU, KM ;
WALUKIEWICZ, W ;
CHAN, LY ;
LEON, R ;
HALLER, EE ;
JAKLEVIC, JM ;
HANSON, CM .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (01) :86-90
[27]   Characterization of CdTe, Cd0.96Zn0.04 and Zn-diffused CdTe by defect etching [J].
Clark, JC ;
Jones, ED ;
Capper, P ;
Mullin, JB .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1998, 9 (05) :397-401
[28]   ZN-DIFFUSED IN0.53GA0.47AS-INP AVALANCHE PHOTODETECTOR [J].
MATSUSHIMA, Y ;
SAKAI, K ;
AKIBA, S ;
YAMAMOTO, T .
APPLIED PHYSICS LETTERS, 1979, 35 (06) :466-468
[29]   GAAS/(GAAL)AS DEEP ZN-DIFFUSED CHANNELED-SUBSTRATE LASER [J].
CHOI, HK ;
WANG, S .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) :3600-3602
[30]   SINUSOIDAL MODULATION CHARACTERISTICS OF ZN-DIFFUSED (GAAL)AS DOUBLE-HETEROSTRUCTURE WINDOW LASERS OF VARYING DIFFUSION DEPTHS [J].
BOURKOFF, E ;
KERPS, D ;
ENGELMANN, RWH .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) :2180-2180
12345