HIGH-RESOLUTION IMAGING OF THE CDTE/(100)INSB INTERFACE - A LATTICE-MATCHED HETEROEPITAXIAL STRUCTURE

被引：11

作者：

HUTCHISON, JL ^{[1
]}

WADDINGTON, WG ^{[1
]}

CULLIS, AG ^{[1
]}

CHEW, NG ^{[1
]}

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND

来源：

JOURNAL OF MICROSCOPY-OXFORD | 1986年 / 142卷

关键词：

D O I：

10.1111/j.1365-2818.1986.tb02752.x

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

引用

页码：153 / 162

页数：10

共 13 条

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[6]

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[7] METALORGANIC VAPOR-DEPOSITION OF CDTE AND HGCDTE EPITAXIAL-FILMS ON INSB AND GAAS SUBSTRATES [J].

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APPLIED PHYSICS LETTERS, 1984, 44 (11) :1046-1048

[8] THE ACCOMMODATION OF MISMATCH AT EPITAXIAL INTERFACES IN SEMICONDUCTORS - SOME CONTRIBUTIONS FROM HREM [J].

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[9]

HUTCHISON JL, 1983, ELECTRON MICROSCOPY, P159

[10]

HUTCHISON JL, 1981, ELECTRON MICROSCOPY, P357

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