THE EFFECT OF SIDEWALL BASE INJECTION ON THE AC BASE RESISTANCE OF A BIPOLAR-TRANSISTOR

被引：0
作者：
SADOVNIKOV, AD
ROULSTON, DJ
机构：
[1] Department of Electrical, Computer Engineering University of Waterloo, Waterloo
来源：
SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 09期
关键词：
D O I：
10.1016/0038-1101(93)90182-P
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
[No abstract available]
引用
收藏
页码：1368 / 1370
页数：3
相关论文
共 50 条
[31]   A NEW TECHNIQUE FOR FORMING A SHALLOW LINK BASE IN A DOUBLE POLYSILICON BIPOLAR-TRANSISTOR [J].
HAYDEN, JD ;
BURNETT, JD ;
PFIESTER, JR ;
WOO, MP .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (01) :63-68
[32]   MODELING THE BASE CURRENT OF AN A-SIH/C-SI HETEROJUNCTION BIPOLAR-TRANSISTOR [J].
BONNAUD, O ;
SAHNOUNE, M ;
SOLHI, A ;
LHERMITE, H .
SOLID-STATE ELECTRONICS, 1992, 35 (04) :483-488
[33]   THIN-BASE BIPOLAR-TRANSISTOR FABRICATION USING GAS IMMERSION LASER DOPING [J].
WEINER, KH ;
SIGMON, TW .
IEEE ELECTRON DEVICE LETTERS, 1989, 10 (06) :260-263
[34]   PEDESTAL BIPOLAR-TRANSISTOR WITH POLYSILICON ACTIVE BASE AND EMITTER WHICH ACHIEVES MINIMIZED CAPACITANCES [J].
HEBERT, F ;
ROULSTON, DJ .
JOURNAL DE PHYSIQUE, 1988, 49 (C-4) :375-378
[35]   EMITTER BASE BANDGAP GRADING EFFECTS ON GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR CHARACTERISTICS [J].
YOSHIDA, J ;
KURATA, M ;
MORIZUKA, K ;
HOJO, A .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) :1714-1721
[36]   EFFECTS OF BASE EMITTER JUNCTION ON THE RESONANT TUNNELING BIPOLAR-TRANSISTOR WITH DOUBLE BARRIERS IN THE EMITTER [J].
WEI, HC ;
WANG, YH ;
HOUNG, MP .
SOLID-STATE ELECTRONICS, 1992, 35 (02) :159-164
[37]   GAAS INVERSION-BASE BIPOLAR-TRANSISTOR (GAAS IBT) WITH GRADED EMITTER BARRIER [J].
MATSUMOTO, K ;
HAYASHI, Y ;
NAGATA, T ;
YOSHIMOTO, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (06) :L1154-L1156
[38]   A LATERAL SILICON-ON-INSULATOR BIPOLAR-TRANSISTOR WITH A SELF-ALIGNED BASE CONTACT [J].
STURM, JC ;
MCVITTIE, JP ;
GIBBONS, JF ;
PFEIFFER, L .
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (03) :104-106
[39]   INFLUENCE OF IMPACT-IONIZATION-INDUCED BASE CURRENT REVERSAL ON BIPOLAR-TRANSISTOR PARAMETERS [J].
VENDRAME, L ;
ZABOTTO, E ;
DALFABBRO, A ;
ZANINI, A ;
VERZELLESI, G ;
ZANONI, E ;
CHANTRE, A ;
PAVAN, P .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (09) :1636-1646
[40]   THIN-BASE INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR WITH PARABOLICALLY GRADED INGAALAS EMITTER [J].
KOCH, S ;
WAHO, T ;
KOBAYASHI, T ;
ISHIBASHI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (7B) :L984-L986
12345