INGAASP LASER-DIODES

被引：2
作者：
OLSEN, GH
机构：
来源：
OPTICAL ENGINEERING | 1981年 / 20卷 / 03期
关键词：
D O I：
10.1117/12.7972738
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
引用
收藏
页码：440 / 445
页数：6
相关论文
共 50 条
[41]   CONSUMERS GUIDE TO LASER-DIODES [J].
HWANG, CJ ;
WANG, CS .
OPTICAL SPECTRA, 1979, 13 (06) :56-59
[42]   APPLICATIONS OF BISTABLE LASER-DIODES [J].
YAMAKOSHI, S .
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (112) :33-42
[43]   ROOM-TEMPERATURE OPERATION OF VISIBLE (LAMBDA=658.6 NM) INGAASP DH LASER-DIODES ON GAASP [J].
FUJII, S ;
SAKAI, S ;
UMENO, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (07) :L551-L552
[44]   HIGH-POWER BURIED INGAASP/GAAS (LAMBDA = 0.8-MU-M) LASER-DIODES [J].
GARBUZOV, DZ ;
ANTONISHKIS, NJ ;
ZHIGULIN, SN ;
ILINSKAYA, ND ;
KOCHERGIN, AV ;
LIFSHITZ, DA ;
RAFAILOV, EU ;
FUKSMAN, MV .
APPLIED PHYSICS LETTERS, 1993, 62 (10) :1062-1064
[45]   HIGH-POWER BURIED HETEROSTRUCTURE INGAASP/INP LASER-DIODES PRODUCED BY AN IMPROVED REGROWTH PROCESS [J].
GARBUZOV, DZ ;
BERISHEV, IE ;
ILYIN, YV ;
ILYINSKAYA, ND ;
OVCHINNIKOV, AV ;
PIKHTIN, NA ;
TARASOV, IS .
JOURNAL OF APPLIED PHYSICS, 1992, 72 (01) :319-321
[46]   THE RELIABILITY OF LASER-DIODES AND LASER TRANSMITTER MODULES [J].
SIM, SP .
MICROELECTRONICS AND RELIABILITY, 1993, 33 (07) :1011-1030
[47]   LINEWIDTH OF SPONTANEOUS EMISSION IN LASER-DIODES [J].
VANCONG, H .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 38 (01) :K69-K72
[48]   THE GROWTH OF ZNMGSSE AND BLUE LASER-DIODES [J].
OZAWA, M ;
ITOH, S ;
OKUYAMA, H ;
NAKANO, K ;
NAKAYAMA, N ;
HIEI, F ;
OHATA, T ;
AKIMOTO, K ;
IKEDA, M ;
ISHIBASHI, A ;
MORI, Y .
OPTOELECTRONICS-DEVICES AND TECHNOLOGIES, 1994, 9 (02) :193-204
[49]   ZNSE-BASED LASER-DIODES [J].
DEPUYDT, JM ;
HAASE, MA ;
QIU, J ;
CHENG, H .
JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) :1078-1078
[50]   EFFECTS OF THE SPACE ENVIRONMENT ON LASER-DIODES [J].
ROUX, M .
ESA JOURNAL-EUROPEAN SPACE AGENCY, 1987, 11 (02) :167-183
12345