GROWTH-RATE OF CHEMICAL-VAPOR-DEPOSITED TIN FILMS IN A TUBULAR REACTOR

A reactant gas mixture composed of TiCl4, H-2 and N2 was introduced to the tubular reactor and TiN was deposited on the inner wall of the reactor under different conditions (temperature, total gas flow rate, P(TiCl4), P(H-2)/P(N2) ratio). The growth rates of the films formed were obtained by measuring the thickness of the films. At 1273 K and P(n2)/P(H-2) = 1, the growth rate of the film decreased as P(TiCl4) increased in the range 1.52 kPa less-than-or-equal-to P(TiCl4) less-than-or-equal-to 4.05 kPa. At 1273 K and P(TiCl4) = 2.43 kPa, the growth rate of the film had a maximum in the case of P(N2)/P(H-2) = 1. The rate equations were obtained at 1273 K in the range 1.52 kPa less-than-or-equal-to P(TiCl4) less-than-or-equal-to 4.05 kPa as follows: R is-proportional-to P(TiCl4)-0.1.P(H-2)0.5.P(N2)(P(N2)/P(H-2) less-than-or-equal-to 1), R is-proportional-to P(TiCl4)-0.1.P(H-2).P(N2)0.5(P(N2)/P(H-2) greater-than-or-equal-to 1). The apparent activation energy of the growth rate of the film at P(N2)/P(H-2) = 1, P(TiCl4) = 2.43 kPa was determined to be 230 kJ/mol (1173 approximately 1273 K).