IMPURITY REDISTRIBUTION DURING LASER IRRADIATION IN ION-IMPLANTED SILICON

被引：0
|
作者：
CAMPISANO, SU
BAERI, P
FOTI, G
CIAVOLA, G
RIMINI, E
机构：
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 48卷 / 1-4期
关键词：
D O I：
10.1080/00337578008209251
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
引用
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页码：187 / 190
页数：4
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