EFFECTS OF GROWTH TEMPERATURE ON MOCVD-GROWN GAAS-ON-SI

被引：0
|
作者：
NOZAKI, S
NOTO, N
OKADA, M
EGAWA, T
SOGA, T
JIMBO, T
UMENO, M
机构：
来源：
CHEMISTRY AND DEFECTS IN SEMICONDUCTOR HETEROSTRUCTURES | 1989年 / 148卷
关键词：
D O I：
10.1557/PROC-148-235
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：235 / 240
页数：6
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