STOICHIOMETRY OF MELT-GROWN N-TYPE GAAS AS REVEALED BY PHOTOLUMINESCENCE MEASUREMENTS

被引：9
作者：
GUISLAIN, HJ
DEWOLF, L
CLAUWS, P
机构：
[1] MET HOBOKEN OVERPELT NV,DIV SEMICONDUCTOR,B-2430 OLEN,BELGIUM
[2] STATE UNIV GHENT,KRISTALLOGRAFIS & STUDIE VASTE STOF LAB,B-9000 GHENT,BELGIUM
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1977年 / 6卷 / 05期
关键词：
D O I：
10.1007/BF02672233
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：541 / 568
页数：28
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