Surface Passivation Schemes for High-Efficiency c-Si Solar Cells - A Review

被引：17

作者：

Balaji, Nagarajan ^{[1
]}

Hussain, Shahzada Qamar ^{[1
]}

Park, Cheolmin ^{[1
]}

Raja, Jayapal ^{[2
]}

Yi, Junsin ^{[2
]}

Jeyakumar, R. ^{[3
]}

机构：

[1] Sungkyunkwan Univ, Dept Energy Sci, Suwon 440746, South Korea

[2] Sungkyunkwan Univ, Coll Informat & Commun Engn, Suwon 440746, South Korea

[3] Natl Phys Lab, CSIR, Phys Energy Harvesting Div, New Delhi 110012, India

来源：

TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS | 2015年 / 16卷 / 05期

基金：

新加坡国家研究基金会;

关键词：

Passivation; SiO2; SiNx; Al2O3;

D O I：

10.4313/TEEM.2015.16.5.227

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

To reduce the cost of solar electricity, the crystalline-silicon (c-Si) photovoltaic industry is moving toward the use of thinner wafers (100 mu m to 200 mu m) to achieve a high efficiency. In this field, it is imperative to achieve an effective passivation method to reduce the electronic losses at the c-Si interface. In this article, we review the most promising surface passivation schemes that are available for high-efficiency solar cells.

引用

页码：227 / 233

页数：7

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