STOICHIOMETRIC EFFECTS IN GROWTH OF DOPED EPITAXIAL LAYERS OF GAAS1-XPX

被引：24

作者：

STEWART, CEE

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1971年 / 8卷 / 03期

关键词：

D O I：

10.1016/0022-0248(71)90067-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：259 / &

共 23 条

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[7] PREPARATION AND PROPERTIES OF HIGH-PURITY EPITAXIAL GAAS GROWN FROM GA SOLUTION [J].

KANG, CS ;

GREENE, PE .

APPLIED PHYSICS LETTERS, 1967, 11 (05) :171-&

[8]

KU SM, 1963, SOLID STATE ELECTRON, V6, P505

[9] INFECTION ELECTROLUMINESCENCE IN (ALKAPPAGA1-KAPPA)AS DIODES OF GRADED ENERGY GAP [J].

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BLACK, JF .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (10) :3733-&

[10] ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE OF GAAS AT 77 DEGREES K [J].

NATHAN, MI ;

BLUM, SE ;

BURNS, G ;

MARINACE, JC .

PHYSICAL REVIEW, 1963, 132 (04) :1482-&

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