FORWARD CHARACTERISTICS OF SI SCHOTTKY DIODES

被引：1
作者：
MORINO, A
SUGANO, T
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1970年 / 9卷 / 12期
关键词：
D O I：
10.1143/JJAP.9.1484
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1484 / &
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