AN ALL-NIOBIUM 8 LEVEL PROCESS FOR SMALL AND MEDIUM SCALE APPLICATIONS

被引:34
作者
YU, LS
BERRY, CJ
DRAKE, RE
LI, K
PATT, R
RADPARVAR, M
WHITELEY, SR
FARIS, SM
机构
关键词
D O I
10.1109/TMAG.1987.1065093
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
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页码:1476 / 1479
页数:4
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共 7 条
[1]   PREPARATION AND PROPERTIES OF NB JOSEPHSON-JUNCTIONS WITH THIN AL LAYERS [J].
GURVITCH, M ;
WASHINGTON, MA ;
HUGGINS, HA ;
ROWELL, JM .
IEEE TRANSACTIONS ON MAGNETICS, 1983, 19 (03) :791-794
[2]  
Gurvitch M., 1984, Advances in Cryogenic Engineering Materials, V30, P509
[3]   A JOSEPHSON VOLTAGE STANDARD USING A SERIES ARRAY OF 100 JUNCTIONS [J].
KAUTZ, RL ;
COSTABILE, G .
IEEE TRANSACTIONS ON MAGNETICS, 1981, 17 (01) :780-783
[4]   SELECTIVE NIOBIUM ANODIZATION PROCESS FOR FABRICATING JOSEPHSON TUNNEL-JUNCTIONS [J].
KROGER, H ;
SMITH, LN ;
JILLIE, DW .
APPLIED PHYSICS LETTERS, 1981, 39 (03) :280-282
[5]   HIGH-QUALITY NB/AL-ALOX/NB JOSEPHSON JUNCTION [J].
MOROHASHI, S ;
SHINOKI, F ;
SHOJI, A ;
AOYAGI, M ;
HAYAKAWA, H .
APPLIED PHYSICS LETTERS, 1985, 46 (12) :1179-1181
[6]   A JOSEPHSON JUNCTION TIME DOMAIN REFLECTOMETER WITH ROOM-TEMPERATURE ACCESS [J].
WHITELEY, SR ;
HOHENWARTER, GKG ;
FARIS, SM .
IEEE TRANSACTIONS ON MAGNETICS, 1987, 23 (02) :899-902
[7]  
1986, STANDARD PROCESS DES