SILICON-NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION (PECVD) OF SIH4/NH3/N2 MIXTURES - SOME PHYSICAL-PROPERTIES

被引：16

|

作者：

LING, CH

KWOK, CY

PRASAD, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1986年 / 25卷 / 10期

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D O I：

10.1143/JJAP.25.1490

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1490 / 1494

页数：5

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