SILICON-NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION (PECVD) OF SIH4/NH3/N2 MIXTURES - SOME PHYSICAL-PROPERTIES

被引：16

作者：

LING, CH

KWOK, CY

PRASAD, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1986年 / 25卷 / 10期

关键词：

D O I：

10.1143/JJAP.25.1490

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1490 / 1494

页数：5

共 15 条

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[4] MECHANISMS OF PLASMA-ENHANCED SILICON-NITRIDE DEPOSITION USING SIH4-N2 MIXTURE [J].

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PAN, P ;

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[5] COMPOSITION AND CHEMICAL-BONDS IN SILICON-NITRIDE BY SIH4-N2 GAS-MIXTURE PLASMA CVD [J].

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[6]

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[8] HYDROGEN CONTENT OF PLASMA-DEPOSITED SILICON-NITRIDE [J].

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RAND, MJ .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) :2473-2477

[9] EFFECT OF OXYGEN INCORPORATION OF BHF ETCH RATE OF PLASMA-ENHANCED CVD SILICON-NITRIDE FILMS PREPARED IN THE TEMPERATURE-RANGE 50-300-DEGREES-C [J].

LING, CH ;

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[10]

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