SILICON-NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION (PECVD) OF SIH4/NH3/N2 MIXTURES - SOME PHYSICAL-PROPERTIES

被引：16
|
作者：
LING, CH
KWOK, CY
PRASAD, K
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1986年 / 25卷 / 10期
关键词：
D O I：
10.1143/JJAP.25.1490
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1490 / 1494
页数：5
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