INDUSTRIAL APPLICATIONS OF INSTRUMENTAL NEUTRON-ACTIVATION ANALYSIS

被引：15

作者：

HUBER, A ^{[1
]}

BOHM, G ^{[1
]}

PAHLKE, S ^{[1
]}

机构：

[1] WACKER CHEMITRON GMBH,O-8362 BURGHAUSEN,GERMANY

来源：

JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY-ARTICLES | 1993年 / 169卷 / 01期

关键词：

D O I：

10.1007/BF02046787

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Neutron activation analysis is shown as a useful diagnostic technique in semiconductor industry. A better acceptance of the method for applications in industry has been achieved through a specialized analytical service. Its main application is the characterization of high purity silicon in all stages of production. Irradiation of large sample volumes allows a very sensitive detection of impurities in silicon with detection limits down to 10(16) g/g. Other applications discussed are the analysis of silicon carbide, quartz, pure water and titanium. Special techniques described are autoradiography, depth profiling and surface analysis. In semiconductor process technology NAA was used to monitor contamination of silicon wafers.

引用

页码：93 / 104

页数：12

共 29 条

[1]

BEREZNAI T, 1974, RADIOCHEM RADIOANAL, V17, P219

[2]

BERGHOLZ W, 1991, SPR ECS M WASH

[3] QUALIFICATION OF THE FABRICATION PROCESS FOR SI-DETECTORS BY NEUTRON-ACTIVATION ANALYSIS [J].

BOHM, G ;

KIM, JI ;

KEMMER, J .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1991, 305 (03) :587-599

[4]

BOHM G, 1990, THESIS TU MUNCHEN

[5]

DECORTE F, 1971, J RADIOANAL CHEM, V8, P277

[6]

DECORTE F, 1971, J RADIOANAL CHEM, V8, P287

[7]

DECORTE F, 1971, J RADIOANAL CHEM, V9, P9

[8]

Falckenberg R., 1991, Tenth E.C. Photovoltaic Solar Energy Conference. Proceedings of the International Conference, P515

[9] INSTRUMENTAL NEUTRON-ACTIVATION ANALYSIS OF SEMICONDUCTOR GRADE SILICON [J].

FUJINAGA, K ;

KUDO, K .

JOURNAL OF RADIOANALYTICAL CHEMISTRY, 1979, 52 (02) :411-419

[10]

GEBAUHR W, 1964, Z ANAL CHEM, V200, P266

← 1 2 3 →