VAPOR-PHASE GROWTH OF (INDIUM,GA)(ARSENIC,P) QUATERNARY ALLOYS

被引：40
作者：
OLSEN, GH
ZAMEROWSKI, TJ
机构：
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1981年 / 17卷 / 02期
关键词：
D O I：
10.1109/JQE.1981.1071080
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：128 / 138
页数：11
相关论文
共 33 条
[1]   MASS-SPECTROMETRIC AND THERMODYNAMIC STUDIES OF CVD OF SOME III-V COMPOUNDS [J].
BAN, VS .
JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) :19-&
[2]   COMPONENTS FOR OPTICAL COMMUNICATIONS-SYSTEMS - A REVIEW [J].
BOTEZ, D ;
HERSKOWITZ, GJ .
PROCEEDINGS OF THE IEEE, 1980, 68 (06) :689-731
[3]   GROWTH-CHARACTERISTICS OF GAAS-GA1-XALXAS STRUCTURES FABRICATED BY LIQUID-PHASE EPITAXY OVER PREFERENTIALLY ETCHED CHANNELS [J].
BOTEZ, D ;
TSANG, WT ;
WANG, S .
APPLIED PHYSICS LETTERS, 1976, 28 (04) :234-237
[4]   EVIDENCE FOR LOW SURFACE RECOMBINATION VELOCITY ON N-TYPE INP [J].
CASEY, HC ;
BUEHLER, E .
APPLIED PHYSICS LETTERS, 1977, 30 (05) :247-249
[5]   PREPARATION OF HIGH PURITY EPITAXIAL INF [J].
CLARKE, RC ;
JOYCE, BD ;
WILGOSS, WHE .
SOLID STATE COMMUNICATIONS, 1970, 8 (14) :1125-&
[6]   MULTILAYERED STRUCTURES OF EPITAXIAL INDIUM-PHOSPHIDE [J].
CLARKE, RC ;
TAYLOR, LL .
JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :190-196
[7]  
CLAWSON AR, 1980, NOSC830 NAV OC SYST
[8]  
CLAWSON AR, 1978, NOSC592 NAV OC SYST
[9]  
ETTENBERG M, 1975, APPL PHYS LETT, V29, P141
[10]   VAPOR-PHASE EPITAXIAL-GROWTH OF QUATERNARY IN1-XGAXASYP1-Y IN THE 0.75-1.35-EV BAND-GAP RANGE [J].
HYDER, SB ;
SAXENA, RR ;
HOOPER, CC .
APPLIED PHYSICS LETTERS, 1979, 34 (09) :584-586
1234