ELECTRON SPECTROSCOPIC IMAGING OF DOPANT PRECIPITATION AND SEGREGATION IN SILICON

被引：1
作者：
FRABBONI, S
LULLI, G
MERLI, PG
MIGLIORI, A
BAUER, R
机构：
[1] CNR,IST LAMEL,I-40126 BOLOGNA,ITALY
[2] CARL ZEISS AG,W-7082 OBERKOCHEN,GERMANY
来源：
ULTRAMICROSCOPY | 1991年 / 35卷 / 3-4期
关键词：
D O I：
10.1016/0304-3991(91)90078-K
中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
Conventional, high-resolution electron microscopy and electron spectroscopy imaging methods have been applied to the characterization of furnace-annealed B-implanted Si and self-annealed As-implanted Si. The combination of these techniques allowed us to point out the presence of a coherent precipitation in the SiB(x) system and the segregation of As at the (111) surfaces of octahedral cavities produced during self-annealing implantation of Si. A simple ideal structural model of the voids with segregated As is proposed.
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页码：265 / 269
页数：5
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