ANALYSIS OF HEAT-TREATED 6H-SIC(0001) SURFACE USING SCANNING-TUNNELING-MICROSCOPY

被引：23
作者：
MARUMOTO, Y
TSUKAMOTO, T
HIRAI, M
KUSAKA, M
IWAMI, M
OZAWA, T
NAGAMURA, T
NAKATA, T
机构：
[1] UNISOKU CO LTD,HIRAKATA,OSAKA 57301,JAPAN
[2] ION ENGN RES INST CO,TSUDA,OSAKA 57301,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 6B期
关键词：
6H-SIC; SCANNING TUNNELING MICROSCOPY; STM; SUPERSTRUCTURE; RECONSTRUCTION;
D O I：
10.1143/JJAP.34.3351
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A scanning tunneling microscopy in ultrahigh vacuum (UHV) has been used to study hexagonal (6H) silicon carbide (0001)Si face prepared by heat treatment. root 3 x root 3, 6 x 6 and 3 x 3 reconstructions were observed above 1100 degrees C. With increasing heat-treatment temperature, surface structure changed drastically and step heights decreased to that of a double layer. The 6 x 6 and 3 x 3 reconstructions can be explained as the structure of a graphite layer on the SiC surface and as the structure proposed by Kaplan, respectively.
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页码：3351 / 3353
页数：3
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