PROTON ISOLATION OF SI DELTA-DOPED GAAS

被引：1

作者：

BILLEN, K

KELLY, MJ

LANCEFIELD, D

GWILLIAM, RM

RTICHIE, DA

GYMER, S

JONES, GAC

LINFIELD, EH

CHURCHILL, AP

机构：

[1] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

[2] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 16期

关键词：

ION IMPLANTATION; GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

D O I：

10.1049/el:19940832

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The use of proton isolation to define Si delta-doped GaAs device structures is reported and was found to be effective in defining delta-doped layers with a two-dimensional electron density of up to 6.8 X 10(12) cm-2. Qualitatively the electron transport characteristics of the proton-isolated devices were identical to those of equivalent mesa-etched devices.

引用

页码：1359 / 1360

页数：2

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