POINT-DEFECT INJECTION INTO SILICON DUE TO LOW-TEMPERATURE SURFACE MODIFICATIONS

被引：30

作者：

CHRISTENSEN, C

PETERSEN, JW

LARSEN, AN

机构：

[1] Institute of Physics and Astronomy, University of Aarhus

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 12期

关键词：

D O I：

10.1063/1.107559

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Deep level transient spectroscopy has been applied to study the appearance of phosphorus-vacancy pairs in n-type silicon following different low-temperature surface modifications. It is established that at most 10(7) cm-2 vacancy is injected into the bulk of the silicon substrate during Pd2Si silicide formation. On the other hand, phosphorus-vacancies pairs are observed after electron irradiation, low energy ion bombardment, and electron gun evaporation of metal films.

引用

页码：1426 / 1428

页数：3

共 16 条

[1] AURET FD, 1984, J APPL PHYS, V55, P955
[2] CHANTRE A, 1982, P MATER RES SOC, V14, P547
[3] FERENCZI G, 1986, PHYS STATUS SOLIDI A, V94, P606
[4] PLATINUM-SILICIDE FORMATION DURING RAPID THERMAL ANNEALING - DEPENDENCE ON SUBSTRATE ORIENTATION AND PRE-IMPLANTED IMPURITIES
GAIDUK, PI
LARSEN, AN
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1991, 53 (02): : 168 - 171
[5] ENHANCED DIFFUSION OF SB-DOPED LAYERS DURING CO AND TI REACTIONS WITH SI
HONEYCUTT, JW
ROZGONYI, GA
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (12) : 1302 - 1304
[6] POINT-DEFECT GENERATION AND ENHANCED DIFFUSION IN SILICON DUE TO TANTALUM SILICIDE OVERLAYS
HU, SM
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (05) : 308 - 310
[7] KASPER E, 1988, SILICON MOL BEAM EPI, V1, pCH2
[8] Kimerling L. C., 1977, International Conference on Radiation Effects in Semiconductors, P221
[9] ROLE OF DEFECT CHARGE STATE IN STABILITY OF POINT-DEFECTS IN SILICON
KIMERLING, LC
DEANGELIS, HM
DIEBOLD, JW
[J]. SOLID STATE COMMUNICATIONS, 1975, 16 (01) : 171 - 174
[10] ANNEALING OF ELECTRON-IRRADIATED N-TYPE SILICON .1. DONOR CONCENTRATION DEPENDENCE
KIMERLING, LC
DEANGELIS, HM
CARNES, CP
[J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02): : 427 - +

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