ION CLUSTER BEAM DEPOSITION OF SILVER AND GERMANIUM ON SILICON

被引:40
作者
KUIPER, AET
THOMAS, GE
SCHOUTEN, WJ
机构
关键词
D O I
10.1016/0022-0248(81)90005-1
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
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页码:17 / 40
页数:24
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共 51 条
[1]   EFFECT OF DEPOSITION PARAMETERS ON CRYSTALLINITY OF EVAPORATED GERMANIUM FILMS [J].
ADAMSKY, RF .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) :4301-&
[2]   THIN-FILM DEPOSITION USING LOW-ENERGY ION-BEAMS .2. PB+ ION-BEAM DEPOSITION AND ANALYSIS OF DEPOSITS [J].
AMANO, J ;
LAWSON, RPW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (03) :831-835
[3]  
AMANO J, 1977, J VAC SCI TECHNOL, V14, P836, DOI 10.1116/1.569281
[4]   VELOCITY DISTRIBUTIONS IN MOLECULAR BEAMS FROM NOZZLE SOURCES [J].
ANDERSON, JB ;
FENN, JB .
PHYSICS OF FLUIDS, 1965, 8 (05) :780-&
[5]  
ANDERSON JB, 1966, ADV CHEM PHYS, V10, P275
[6]   INVESTIGATION OF GERMANIUM FILMS AND GE-SI INTERFACE STRUCTURE BY TRANSMISSION ELECTRON-MICROSCOPY [J].
ASEEV, AL ;
VASIN, OI ;
STENIN, SI ;
SOLDATENKO, NN ;
TKHORIK, YA .
THIN SOLID FILMS, 1975, 30 (01) :73-82
[7]   NECESSARY CONDITIONS FOR GENERATING INTENSE CLUSTER BEAM [J].
BE, SH ;
YANO, K ;
ENJOJI, H ;
OKAMOTO, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (07) :1049-1056
[8]   STRAHLEN AUS KONDENSIERTEN ATOMEN UND MOLEKELN IM HOCHVAKUUM [J].
BECKER, EW ;
BIER, K ;
HENKES, W .
ZEITSCHRIFT FUR PHYSIK, 1956, 146 (03) :333-338
[9]  
BECKER EW, 1960, Z NATURFORSCH A, V15, P645
[10]  
BIER K, 1966, ADV APPL PHYS S3, V2, P260