ENERGY AND ELECTRIC-FIELD DEPENDENCE OF SI-SIO2 INTERFACE STATE PARAMETERS BY OPTICALLY ACTIVATED ADMITTANCE EXPERIMENTS

被引：23

作者：

POON, TC

CARD, HC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 12期

关键词：

D O I：

10.1063/1.327614

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6273 / 6278

页数：6

共 14 条

[1] ELECTRONIC STRUCTURE OF DEFECT CENTERS IN SIO2 [J].

BENNETT, AJ ;

ROTH, LM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (06) :1251-&

[2] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES [J].

BERGLUND, CN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) :701-+

[3]

CHENG YC, 1977, PROG SURF SCI, V8, P182, DOI 10.1016/0079-6816(77)90003-X

[4]

DAHLKE WE, 1979, SOLID STATE ELECTRON, V22, P893, DOI 10.1016/0038-1101(79)90058-3

[5]

Goetzberger A., 1976, Critical Reviews in Solid State Sciences, V6, P1, DOI 10.1080/10408437608243548

[6] DETERMINATION OF SURFACE-STATE PARAMETERS FROM TRANSFER-LOSS MEASUREMENTS IN CCDS [J].

KRIEGLER, RJ ;

DEVENYI, TF ;

CHIK, KD ;

SHAPPIR, J .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :398-401

[7] A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS [J].

KUHN, M .

SOLID-STATE ELECTRONICS, 1970, 13 (06) :873-+

[8]

LANGHLIN RB, 1978, PHYSICS SIO2 ITS INT, P321

[9] THEORY OF BOUND-STATES ASSOCIATED WITH N-TYPE INVERSION LAYERS ON SILICON [J].

MARTIN, BG ;

WALLIS, RF .

PHYSICAL REVIEW B, 1978, 18 (10) :5644-5648

[10] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J].

NICOLLIA.EH ;

GOETZBER.A .

BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06) :1055-+

← 1 2 →