GAAS TAPER ETCHING BY MIXTURE GAS REACTIVE ION ETCHING SYSTEM

被引：0

作者：

HIRANO, M

ASAI, K

机构：

[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa Pref, 243-01, 3-1, Morinosato Wakamiya

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 12B期

关键词：

GAAS; RIE; CCL2F2/HE; MIXTURE GAS; TAPER ETCHING;

D O I：

10.1143/JJAP.30.L2136

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel technique is proposed for taper-etching GaAs. The angle of the sidewalls formed by undercutting GaAs can be controlled by adjusting the ratio of He to CCl2F2 used for reactive ion etching (RIE). A negative undercut with a taper angle of 80 degrees is formed with He gas content of 95%. Etched surfaces are analyzed by micro-Auger spectroscopy. The detailed etching conditions for forming taper shapes are described and the mechanism of such formation is also discussed.

引用

页码：L2136 / L2138

页数：3

共 8 条

[1] NEW UNDERCUTTING PHENOMENON IN PLASMA ETCHING [J].