MONOLAYER ABRUPTNESS IN HIGHLY STRAINED INASXP1-X/INP QUANTUM WELL INTERFACES

被引：28

作者：

SCHNEIDER, RP ^{[1
]}

WESSELS, BW ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 12期

关键词：

D O I：

10.1063/1.100742

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1142 / 1144

页数：3

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