MONOLAYER ABRUPTNESS IN HIGHLY STRAINED INASXP1-X/INP QUANTUM WELL INTERFACES

被引：28
作者：
SCHNEIDER, RP [1 ]
WESSELS, BW [1 ]
机构：
[1] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208
来源：
APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 12期
关键词：
D O I：
10.1063/1.100742
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1142 / 1144
页数：3
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