Solid state dewetting application for In/ (0001) Sb2Te3 2D layered semiconductor nanosystem formation

被引:0
作者
Galiy, P. V. [1 ]
Nenchuk, T. M. [1 ]
Ciszewski, A. [2 ]
Mazur, P. [2 ]
Dzyuba, V. I. [1 ]
Makar, T. R. [1 ]
Tsvetkova, O. V. [1 ]
机构
[1] Ivan Franko Lviv Natl Univ, Elect & Comp Technol Dept, 50 Dragomanov St, Lvov 79005, Ukraine
[2] Univ Wroclaw, Inst Expt Phys, Plac Maxa Borna 9, PL-50204 Wroclaw, Poland
关键词
Layered crystal chalcogenides; Nanostructures' template directed assembly; Solid state dewetting; X-ray photoelectron spectroscopy; Low energy electron diffraction; Tunneling microscopy/spectroscopy;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The (0001) surface of Sb2Te3 layered semiconductor crystal is used as a template for the formation of indium nanostructures by solid state dewetting (SSD). The initial surfaces for the SSD procedure obtained by cleavage have got perfect crystalline structure, both on a macro scale, according to low energy electron diffraction (LEED) data, and on a nanoscale according to scanning tunneling microscopy (STM) studies. Sb2Te3 samples were also characterized by X-ray diffraction and X-ray photoelectron spectroscopy. Thermally deposited indium in the SSD process forms on (0001) surface of Sb2Te3 self-organized ordered array of 0D nanostructures, due to the directing action of the surface relief, which is not smooth on a nanoscale. STM shows that the triangular shape and spatial arrangement of indium induced nanostructures are consistent with the surface lattice symmetry due to SSD processes. The scanning tunneling spectroscopy reveals correlation between indium coverage and high quantity of DOS within the band gap of Sb2Te3. Copyright (c) 2022 Elsevier Ltd. All rights reserved. Selection and peer-review under responsibility of the scientific committee of the XVIII International Freik Conference on Physics and Technology of Thin Films and Nanosystems (ICPTTFN-XVIII).
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页码:5753 / 5758
页数:6
相关论文
共 26 条
[1]   REFINEMENT OF SB2TE3 AND SB2TE2SE STRUCTURES AND THEIR RELATIONSHIP TO NONSTOICHIOMETRIC SB2TE3-YSEY COMPOUNDS [J].
ANDERSON, TL ;
KRAUSE, HB .
ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE, 1974, 30 (MAY15) :1307-1310
[2]   Simultaneous observation of surface- and edge-states of a 2D topological insulator through scanning tunneling spectroscopy and differential conductance imaging [J].
Bhunia, Hrishikesh ;
Bar, Abhijit ;
Bera, Abhijit ;
Pal, Amlan J. .
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2017, 19 (15) :9872-9878
[3]   Principles of crystal nucleation and growth [J].
De Yoreo, JJ ;
Vekilov, PG .
BIOMINERALIZATION, 2003, 54 :57-93
[4]   InTe surface application as template for indium deposited nanosystem formation [J].
Galiy, P. V. ;
Nenchuk, T. M. ;
Ciszewski, A. ;
Mazur, P. ;
Dzyuba, V. I. ;
Makar, T. R. .
MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2021, 721 (01) :1-9
[5]   Self-assembled indium nanostructures formation on InSe (0001) surface [J].
Galiy, P. V. ;
Nenchuk, T. M. ;
Ciszewski, A. ;
Mazur, P. ;
Buzhuk, Ya. M. ;
Tsvetkova, O. V. .
APPLIED NANOSCIENCE, 2020, 10 (12) :4629-4635
[6]   Quantitative analysis of indium deposited layer formation mechanism for In/In4Se3 (100) nanosystem [J].
Galiy, P. V. ;
Nenchuk, T. M. ;
Mazur, P. ;
Ciszewski, A. ;
Yarovets, I. R. .
MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2018, 674 (01) :11-18
[7]   Scanning tunneling microscopy/spectroscopy study of In/In4Se3 (100) nanosystem [J].
Galiy, Pavlo ;
Mazur, Piotr ;
Ciszewski, Antoni ;
Nenchuk, Taras ;
Yarovets, Igor .
EUROPEAN PHYSICAL JOURNAL PLUS, 2019, 134 (02)
[8]   Auger electron spectroscopy studies of In4Se3 layered crystals [J].
Galiy, PV ;
Nenchuk, TM ;
Stakhira, JM ;
Fiyala, YM .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1999, 105 (01) :91-97
[9]   Study of interface formation on the cleavage surfaces of A3B6 layered semiconductors [J].
Galiy, PV ;
Nenchuk, TM ;
Stakhira, JM .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2001, 34 (01) :18-24
[10]  
Golubev R. M., 2019, Journal of Physics: Conference Series, V1326, DOI 10.1088/1742-6596/1326/1/012035