OPTICAL DETERMINATION OF THE ETCH PIT DENSITY IN GAAS WAFERS

被引：1
作者：
DOBRILLA, P
机构：
[1] Litton Systems, United States
来源：
MATERIALS LETTERS | 1988年 / 7卷 / 03期
关键词：
D O I：
10.1016/0167-577X(88)90129-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
6
引用
收藏
页码：78 / 82
页数：5
相关论文
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[2]   A SIMPLE TECHNIQUE TO EVALUATE THE DENSITY OF ETCH PITS IN GAAS [J].
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[4]   DISLOCATION ETCH PITS IN SINGLE CRYSTAL GAAS [J].
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[5]   AN ANALYSIS OF THE DERIVATIVE WEIGHT-GAIN SIGNAL FROM MEASURED CRYSTAL SHAPE - IMPLICATIONS FOR DIAMETER CONTROL OF GAAS [J].
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[6]  
REES GJ, 1986, MATER LETT, V4, P259
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