TRANSIENT PHOTOCAPACITANCE AND PHOTOCURRENT STUDIES OF UNDOPED HYDROGENATED AMORPHOUS-SILICON

被引：51

作者：

GELATOS, AV ^{[1
]}

MAHAVADI, KK ^{[1
]}

COHEN, JD ^{[1
]}

HARBISON, JP ^{[1
]}

机构：

[1] BELL COMMUN RES INC,RED BANK,NJ 07701

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 05期

关键词：

D O I：

10.1063/1.99892

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：403 / 406

页数：4

共 9 条

[1]

AMER NM, 1984, SEMICONDUCT SEMIMET, V21, P83

[2] IDENTIFICATION OF THE DANGLING-BOND STATE WITHIN THE MOBILITY GAP OF ALPHA-SI-H BY DEPLETION-WIDTH-MODULATED ELECTRON-SPIN-RESONANCE SPECTROSCOPY [J].

COHEN, JD ;

HARBISON, JP ;

WECHT, KW .

PHYSICAL REVIEW LETTERS, 1982, 48 (02) :109-112

[3] CALCULATION OF THE DYNAMIC-RESPONSE OF SCHOTTKY BARRIERS WITH A CONTINUOUS DISTRIBUTION OF GAP STATES [J].

COHEN, JD ;

LANG, DV .

PHYSICAL REVIEW B, 1982, 25 (08) :5321-5350

[4]

GELATOS AV, 1986, APPL PHYS LETT, V49, P772

[5] THE DENSITY OF STATES IN UNDOPED AND DOPED AMORPHOUS HYDROGENATED SILICON [J].

KOCKA, J .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 90 (1-3) :91-98

[6]

Lang D.V., 1979, TOP APPL PHYS, P93, DOI 10.1007/3540095950_9

[7] MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY [J].

LANG, DV ;

COHEN, JD ;

HARBISON, JP .

PHYSICAL REVIEW B, 1982, 25 (08) :5285-5320

[8] LIGHT-INDUCED DEFECT CREATION IN HYDROGENATED AMORPHOUS-SILICON - A DETAILED EXAMINATION USING JUNCTION-CAPACITANCE METHODS [J].

MAHAVADI, KK ;

ZELLAMA, K ;

COHEN, JD ;

HARBISON, JP .

PHYSICAL REVIEW B, 1987, 35 (14) :7776-7779

[9] DISORDER EFFECTS ON DEEP TRAPPING IN AMORPHOUS-SEMICONDUCTORS [J].

STREET, RA .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 49 (01) :L15-L20

← 1 →