NEW MBE BUFFER USED TO ELIMINATE BACKGATING IN GAAS-MESFETS

被引：544
|
作者：
SMITH, FW
CALAWA, AR
CHEN, CL
MANFRA, MJ
MAHONEY, LJ
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 02期
关键词：
D O I：
10.1109/55.2046
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：77 / 80
页数：4
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