ELECTRONS IN SILICON MICROSTRUCTURES

被引：17

作者：

HOWARD, RE

JACKEL, LD

MANKIEWICH, PM

SKOCPOL, WJ

机构：

[1] AT&T Bell Lab, Communications, Sciences Div, Holmdel, NJ, USA, AT&T Bell Lab, Communications Sciences Div, Holmdel, NJ, USA

来源：

SCIENCE | 1986年 / 231卷 / 4736期

关键词：

D O I：

10.1126/science.231.4736.346

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：346 / 349

页数：4

共 27 条

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[2]

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[3] ONE-DIMENSIONAL ELECTRON LOCALIZATION AND CONDUCTION BY ELECTRON ELECTRON-SCATTERING IN NARROW SILICON [J].

DEAN, CC ;

PEPPER, M .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (31) :5663-5676

[4] THE TRANSITION FROM TWO-DIMENSIONAL TO ONE-DIMENSIONAL ELECTRONIC TRANSPORT IN NARROW SILICON ACCUMULATION LAYERS [J].

DEAN, CC ;

PEPPER, M .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (36) :1287-1297

[5] TRANSITION FROM 1-DIMENSIONAL TO TWO-DIMENSIONAL HOPPING CONDUCTIVITY IN SILICON ACCUMULATION LAYERS [J].

FOWLER, AB ;

HARTSTEIN, A ;

WEBB, RA .

PHYSICA B & C, 1983, 117 (MAR) :661-666

[6] CONDUCTANCE IN RESTRICTED-DIMENSIONALITY ACCUMULATION LAYERS [J].

FOWLER, AB ;

HARTSTEIN, A ;

WEBB, RA .

PHYSICAL REVIEW LETTERS, 1982, 48 (03) :196-199

[7] ONE-DIMENSIONAL CONDUCTANCE IN SILICON MOSFETS [J].

HARTSTEIN, A ;

WEBB, RA ;

FOWLER, AB ;

WAINER, JJ .

SURFACE SCIENCE, 1984, 142 (1-3) :1-13

[8] SINGLE ELECTRON SWITCHING EVENTS IN NANOMETER-SCALE SI MOSFETS [J].

HOWARD, RE ;

SKOCPOL, WJ ;

JACKEL, LD ;

MANKIEWICH, PM ;

FETTER, LA ;

TENNANT, DM ;

EPWORTH, R ;

RALLS, KS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) :1669-1674

[9] MICROFABRICATION AS A SCIENTIFIC TOOL [J].

HOWARD, RE ;

LIAO, PF ;

SKOCPOL, WJ ;

JACKEL, LD ;

CRAIGHEAD, HG .

SCIENCE, 1983, 221 (4606) :117-121

[10]

HOWARD RE, 1982, VLSI ELECTRONICS, V5

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