HIGH-FIELD CONDUCTIVITY IN GERMANIUM AND SILICON AT MICROWAVE FREQUENCIES

被引：65

作者：

ZUCKER, J

FOWLER, VJ

CONWELL, EM

机构：

来源：

关键词：

D O I：

10.1063/1.1728360

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2606 / &

共 7 条

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[5] MICROWAVE FIELD DEPENDENCE OF DRIFT MOBILITY IN GERMANIUM [J].

SEEGER, K .

PHYSICAL REVIEW, 1959, 114 (02) :476-481

[6]

SEITZ F, 1940, MODERN THEORY SOLDS

ZUCKER, J .