EPITAXIAL-GROWTH AND DOPING OF AND DEVICE DEVELOPMENT IN MONOCRYSTALLINE BETA-SIC SEMICONDUCTOR THIN-FILMS

被引:40
作者
DAVIS, RF
机构
关键词
D O I
10.1016/0040-6090(89)90468-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:1 / 15
页数:15
相关论文
共 20 条
[1]  
BERGEMEISTER EA, 1979, J APPL PHYS, V50, P5790
[2]  
Carter C. H. Jr., 1986, Journal of Materials Research, V1, P811, DOI 10.1557/JMR.1986.0811
[3]  
CARTER CH, 1985, MATER RES SOC S P, V46, P593
[4]   HOT-ELECTRON MICROWAVE CONDUCTIVITY OF WIDE BANDGAP SEMICONDUCTORS [J].
DAS, P ;
FERRY, DK .
SOLID-STATE ELECTRONICS, 1976, 19 (10) :851-855
[5]  
JEPPS NW, 1984, J CRYST GROWTH CHARA, V7, P259
[6]  
JOHNSON EO, 1965, RCA REV, V26, P163
[7]   FIGURE OF MERIT FOR SEMICONDUCTORS FOR HIGH-SPEED SWITCHES [J].
KEYES, RW .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (02) :225-&
[8]   THEORETICAL AND EMPIRICAL-STUDIES OF IMPURITY INCORPORATION INTO BETA-SIC THIN-FILMS DURING EPITAXIAL-GROWTH [J].
KIM, HJ ;
DAVIS, RF .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (11) :2350-2357
[9]   PHYSICAL AND CHEMICAL NATURE OF FILMS FORMED ON SI(100) SURFACES SUBJECTED TO C2H4 AT ELEVATED-TEMPERATURES [J].
KIM, HJ ;
DAVIS, RF ;
COX, XB ;
LINTON, RW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (09) :2269-2275
[10]   EPITAXIAL-GROWTH OF BETA-SIC THIN-FILMS ON 6H ALPHA-SIC SUBSTRATES VIA CHEMICAL VAPOR-DEPOSITION [J].
KONG, HS ;
GLASS, JT ;
DAVIS, RF .
APPLIED PHYSICS LETTERS, 1986, 49 (17) :1074-1076