SILICON-INTERSTITIAL OXYGEN-INTERSTITIAL COMPLEX AS A MODEL OF THE 450-DEGREES-C OXYGEN THERMAL DONOR IN SILICON

被引：25
作者：
DEAK, P
SNYDER, LC
CORBETT, JW
机构：
[1] SUNY ALBANY, DEPT CHEM, ALBANY, NY 12222 USA
[2] SUNY ALBANY, DEPT PHYS, ALBANY, NY 12222 USA
来源：
PHYSICAL REVIEW LETTERS | 1991年 / 66卷 / 06期
关键词：
D O I：
10.1103/PhysRevLett.66.747
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The complex of a divalent silicon interstitial and a pair of adjacent oxygen interstitials is proposed as the core of the 450-degrees-C oxygen thermal donor in silicon. The proposal is supported by theoretical calculations which suggest that this complex is stable relative to the self-interstitial and two separated oxygen interstitials, and that it has a doubly occupied level close to the computed conduction-band edge. The calculated spin distribution is in qualitative agreement with the one found experimentally for the NL8 center.
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页码：747 / 749
页数：3
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