ACCUMULATION AND ANNEALING OF MAIN COMPENSATING RADIATION DEFECTS IN P-TYPE SI-GE

被引：0
作者：
KUZNETSOV, VI
LUGAKOV, PF
SALMANOV, AR
TSIKUNOV, AV
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1989年 / 23卷 / 08期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：925 / 927
页数：3
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