LOW-TEMPERATURE EQUILIBRIA OF POINT-DEFECTS INDUCED BY CONVENTIONAL AND RAPID THERMAL ANNEALING IN CZ SILICON

被引：0
作者：
SUSI, E
LULLI, G
POGGI, A
SOUREK, Z
机构：
[1] CNR, IST LAMEL, I-40126 BOLOGNA, ITALY
[2] CZECHOSLOVAK ACAD SCI, IST PHYS, CS-18040 PRAGUE 8, CZECHOSLOVAKIA
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C120 / C120
页数：1
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