SELF-DIFFUSION IN INTRINSIC AND EXTRINSIC SILICON

被引:159
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FAIRFIEL.JM
MASTERS, BJ
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10.1063/1.1710079
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O59 [应用物理学];
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页码:3148 / &
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[1]  
ARMSTRONG WJ, 1966, ELECTROCHEM TECHNOL, V4, P475
[2]   THE DIFFUSIVITY OF ARSENIC IN SILICON [J].
ARMSTRONG, WJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (11) :1065-1067
[3]   NEW METHOD FOR TREATING LATTICE POINT DEFECTS IN COVALENT CRYSTALS [J].
BENNEMAN, KH .
PHYSICAL REVIEW, 1965, 137 (5A) :1497-+
[4]   The calculation of errors by the method of least squares [J].
Birge, RT .
PHYSICAL REVIEW, 1932, 40 (02) :207-227
[5]  
BOSENBERG W, 1955, Z NATURFORSCH PT A, V10, P285
[6]   X-RAY INVESTIGATION OF PERFECTION OF SILICON [J].
CARRUTHERS, JR ;
ASHNER, JD ;
HOFFMAN, RB .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (11) :3389-&
[7]  
DOO VY, 1962, AUG AIME C ADV EL MA
[8]   INVESTIGATION OF QUENCHED-IN-DEFECTS IN GE AND SI BY MEANS OF 64CU [J].
FULLER, CS ;
WOLFSTIRN, KB .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (09) :1463-+
[9]   DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J].
FULLER, CS ;
DITZENBERGER, JA .
JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) :544-553
[10]   METHOD FOR DETERMINING SILICON DIFFUSION COEFFICIENTS IN SILICON AND IN SOME SILICON COMPOUNDS [J].
GHOSHTAGORE, RN .
PHYSICAL REVIEW LETTERS, 1966, 16 (20) :890-+