ULTRA-LARGE-SCALE INTEGRATION DEVICE SCALING AND RELIABILITY

被引:14
作者
HU, CM
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 06期
关键词
D O I
10.1116/1.587505
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
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页码:3237 / 3241
页数:5
相关论文
共 17 条
[1]  
CHUNG J, 1989, P INT RELIABILITY PH, P92
[2]   PERFORMANCE AND RELIABILITY-DESIGN ISSUES FOR DEEP-SUBMICROMETER MOSFETS [J].
CHUNG, JE ;
JENG, MC ;
MOON, JE ;
KO, PK ;
HU, CM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (03) :545-554
[3]  
HU C, 1994, JPN APPL PHYS, P365
[4]   HOT-ELECTRON-INDUCED MOSFET DEGRADATION - MODEL, MONITOR, AND IMPROVEMENT [J].
HU, CM ;
TAM, SC ;
HSU, FC ;
KO, PK ;
CHAN, TY ;
TERRILL, KW .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :375-385
[5]  
KO P, 1989, ADV MOS DEVICE PHYSI, pCH1
[6]  
LEE KF, 1993, 1993 IEDM, P131
[7]   DESIGN METHODOLOGY AND SIZE LIMITATIONS OF SUBMICROMETER MOSFETS FOR DRAM APPLICATION [J].
LEE, WH ;
OSAKAMA, T ;
ASADA, K ;
SUGANO, T .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (11) :1876-1884
[8]   PROJECTING INTERCONNECT ELECTROMIGRATION LIFETIME FOR ARBITRARY CURRENT WAVE-FORMS [J].
LIEW, BK ;
CHEUNG, NW ;
HU, C .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (05) :1343-1351
[9]   THRESHOLD VOLTAGE MODEL FOR DEEP-SUBMICROMETER MOSFETS [J].
LIU, ZH ;
HU, CM ;
HUANG, JH ;
CHAN, TY ;
JENG, MC ;
KO, PK ;
CHENG, YC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (01) :86-95
[10]   CHARACTERISTICS AND LIMITATION OF SCALED-DOWN MOSFETS DUE TO 2-DIMENSIONAL FIELD-EFFECT [J].
MASUDA, H ;
NAKAI, M ;
KUBO, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (06) :980-986