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ULTRA-LARGE-SCALE INTEGRATION DEVICE SCALING AND RELIABILITY
被引:14
作者
:
HU, CM
论文数:
0
引用数:
0
h-index:
0
HU, CM
机构
:
来源
:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
|
1994年
/ 12卷
/ 06期
关键词
:
D O I
:
10.1116/1.587505
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:3237 / 3241
页数:5
相关论文
共 17 条
[1]
CHUNG J, 1989, P INT RELIABILITY PH, P92
[2]
PERFORMANCE AND RELIABILITY-DESIGN ISSUES FOR DEEP-SUBMICROMETER MOSFETS
CHUNG, JE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,ELECTR RES LAB,BERKELEY,CA 94720
CHUNG, JE
JENG, MC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,ELECTR RES LAB,BERKELEY,CA 94720
JENG, MC
MOON, JE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,ELECTR RES LAB,BERKELEY,CA 94720
MOON, JE
KO, PK
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,ELECTR RES LAB,BERKELEY,CA 94720
KO, PK
HU, CM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,ELECTR RES LAB,BERKELEY,CA 94720
HU, CM
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1991,
38
(03)
: 545
-
554
[3]
HU C, 1994, JPN APPL PHYS, P365
[4]
HOT-ELECTRON-INDUCED MOSFET DEGRADATION - MODEL, MONITOR, AND IMPROVEMENT
HU, CM
论文数:
0
引用数:
0
h-index:
0
HU, CM
TAM, SC
论文数:
0
引用数:
0
h-index:
0
TAM, SC
HSU, FC
论文数:
0
引用数:
0
h-index:
0
HSU, FC
KO, PK
论文数:
0
引用数:
0
h-index:
0
KO, PK
CHAN, TY
论文数:
0
引用数:
0
h-index:
0
CHAN, TY
TERRILL, KW
论文数:
0
引用数:
0
h-index:
0
TERRILL, KW
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1985,
32
(02)
: 375
-
385
[5]
KO P, 1989, ADV MOS DEVICE PHYSI, pCH1
[6]
LEE KF, 1993, 1993 IEDM, P131
[7]
DESIGN METHODOLOGY AND SIZE LIMITATIONS OF SUBMICROMETER MOSFETS FOR DRAM APPLICATION
LEE, WH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,DEPT ELECTR ENGN,BUNKYO KU,TOKYO 113,JAPAN
UNIV TOKYO,DEPT ELECTR ENGN,BUNKYO KU,TOKYO 113,JAPAN
LEE, WH
OSAKAMA, T
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,DEPT ELECTR ENGN,BUNKYO KU,TOKYO 113,JAPAN
UNIV TOKYO,DEPT ELECTR ENGN,BUNKYO KU,TOKYO 113,JAPAN
OSAKAMA, T
ASADA, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,DEPT ELECTR ENGN,BUNKYO KU,TOKYO 113,JAPAN
UNIV TOKYO,DEPT ELECTR ENGN,BUNKYO KU,TOKYO 113,JAPAN
ASADA, K
SUGANO, T
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,DEPT ELECTR ENGN,BUNKYO KU,TOKYO 113,JAPAN
UNIV TOKYO,DEPT ELECTR ENGN,BUNKYO KU,TOKYO 113,JAPAN
SUGANO, T
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1988,
35
(11)
: 1876
-
1884
[8]
PROJECTING INTERCONNECT ELECTROMIGRATION LIFETIME FOR ARBITRARY CURRENT WAVE-FORMS
LIEW, BK
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
LIEW, BK
CHEUNG, NW
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
CHEUNG, NW
HU, C
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
HU, C
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1990,
37
(05)
: 1343
-
1351
[9]
THRESHOLD VOLTAGE MODEL FOR DEEP-SUBMICROMETER MOSFETS
LIU, ZH
论文数:
0
引用数:
0
h-index:
0
机构:
CYPRESS SEMICOND INC, SAN JOSE, CA 95134 USA
LIU, ZH
HU, CM
论文数:
0
引用数:
0
h-index:
0
机构:
CYPRESS SEMICOND INC, SAN JOSE, CA 95134 USA
HU, CM
HUANG, JH
论文数:
0
引用数:
0
h-index:
0
机构:
CYPRESS SEMICOND INC, SAN JOSE, CA 95134 USA
HUANG, JH
CHAN, TY
论文数:
0
引用数:
0
h-index:
0
机构:
CYPRESS SEMICOND INC, SAN JOSE, CA 95134 USA
CHAN, TY
JENG, MC
论文数:
0
引用数:
0
h-index:
0
机构:
CYPRESS SEMICOND INC, SAN JOSE, CA 95134 USA
JENG, MC
KO, PK
论文数:
0
引用数:
0
h-index:
0
机构:
CYPRESS SEMICOND INC, SAN JOSE, CA 95134 USA
KO, PK
CHENG, YC
论文数:
0
引用数:
0
h-index:
0
机构:
CYPRESS SEMICOND INC, SAN JOSE, CA 95134 USA
CHENG, YC
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1993,
40
(01)
: 86
-
95
[10]
CHARACTERISTICS AND LIMITATION OF SCALED-DOWN MOSFETS DUE TO 2-DIMENSIONAL FIELD-EFFECT
MASUDA, H
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory. Hitachi Ltd., Kokubunji-shi, Tokyo
MASUDA, H
NAKAI, M
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory. Hitachi Ltd., Kokubunji-shi, Tokyo
NAKAI, M
KUBO, M
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory. Hitachi Ltd., Kokubunji-shi, Tokyo
KUBO, M
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(06)
: 980
-
986
←
1
2
→
共 17 条
[1]
CHUNG J, 1989, P INT RELIABILITY PH, P92
[2]
PERFORMANCE AND RELIABILITY-DESIGN ISSUES FOR DEEP-SUBMICROMETER MOSFETS
CHUNG, JE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,ELECTR RES LAB,BERKELEY,CA 94720
CHUNG, JE
JENG, MC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,ELECTR RES LAB,BERKELEY,CA 94720
JENG, MC
MOON, JE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,ELECTR RES LAB,BERKELEY,CA 94720
MOON, JE
KO, PK
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,ELECTR RES LAB,BERKELEY,CA 94720
KO, PK
HU, CM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,ELECTR RES LAB,BERKELEY,CA 94720
HU, CM
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1991,
38
(03)
: 545
-
554
[3]
HU C, 1994, JPN APPL PHYS, P365
[4]
HOT-ELECTRON-INDUCED MOSFET DEGRADATION - MODEL, MONITOR, AND IMPROVEMENT
HU, CM
论文数:
0
引用数:
0
h-index:
0
HU, CM
TAM, SC
论文数:
0
引用数:
0
h-index:
0
TAM, SC
HSU, FC
论文数:
0
引用数:
0
h-index:
0
HSU, FC
KO, PK
论文数:
0
引用数:
0
h-index:
0
KO, PK
CHAN, TY
论文数:
0
引用数:
0
h-index:
0
CHAN, TY
TERRILL, KW
论文数:
0
引用数:
0
h-index:
0
TERRILL, KW
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1985,
32
(02)
: 375
-
385
[5]
KO P, 1989, ADV MOS DEVICE PHYSI, pCH1
[6]
LEE KF, 1993, 1993 IEDM, P131
[7]
DESIGN METHODOLOGY AND SIZE LIMITATIONS OF SUBMICROMETER MOSFETS FOR DRAM APPLICATION
LEE, WH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,DEPT ELECTR ENGN,BUNKYO KU,TOKYO 113,JAPAN
UNIV TOKYO,DEPT ELECTR ENGN,BUNKYO KU,TOKYO 113,JAPAN
LEE, WH
OSAKAMA, T
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,DEPT ELECTR ENGN,BUNKYO KU,TOKYO 113,JAPAN
UNIV TOKYO,DEPT ELECTR ENGN,BUNKYO KU,TOKYO 113,JAPAN
OSAKAMA, T
ASADA, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,DEPT ELECTR ENGN,BUNKYO KU,TOKYO 113,JAPAN
UNIV TOKYO,DEPT ELECTR ENGN,BUNKYO KU,TOKYO 113,JAPAN
ASADA, K
SUGANO, T
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,DEPT ELECTR ENGN,BUNKYO KU,TOKYO 113,JAPAN
UNIV TOKYO,DEPT ELECTR ENGN,BUNKYO KU,TOKYO 113,JAPAN
SUGANO, T
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1988,
35
(11)
: 1876
-
1884
[8]
PROJECTING INTERCONNECT ELECTROMIGRATION LIFETIME FOR ARBITRARY CURRENT WAVE-FORMS
LIEW, BK
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
LIEW, BK
CHEUNG, NW
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
CHEUNG, NW
HU, C
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
HU, C
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1990,
37
(05)
: 1343
-
1351
[9]
THRESHOLD VOLTAGE MODEL FOR DEEP-SUBMICROMETER MOSFETS
LIU, ZH
论文数:
0
引用数:
0
h-index:
0
机构:
CYPRESS SEMICOND INC, SAN JOSE, CA 95134 USA
LIU, ZH
HU, CM
论文数:
0
引用数:
0
h-index:
0
机构:
CYPRESS SEMICOND INC, SAN JOSE, CA 95134 USA
HU, CM
HUANG, JH
论文数:
0
引用数:
0
h-index:
0
机构:
CYPRESS SEMICOND INC, SAN JOSE, CA 95134 USA
HUANG, JH
CHAN, TY
论文数:
0
引用数:
0
h-index:
0
机构:
CYPRESS SEMICOND INC, SAN JOSE, CA 95134 USA
CHAN, TY
JENG, MC
论文数:
0
引用数:
0
h-index:
0
机构:
CYPRESS SEMICOND INC, SAN JOSE, CA 95134 USA
JENG, MC
KO, PK
论文数:
0
引用数:
0
h-index:
0
机构:
CYPRESS SEMICOND INC, SAN JOSE, CA 95134 USA
KO, PK
CHENG, YC
论文数:
0
引用数:
0
h-index:
0
机构:
CYPRESS SEMICOND INC, SAN JOSE, CA 95134 USA
CHENG, YC
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1993,
40
(01)
: 86
-
95
[10]
CHARACTERISTICS AND LIMITATION OF SCALED-DOWN MOSFETS DUE TO 2-DIMENSIONAL FIELD-EFFECT
MASUDA, H
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory. Hitachi Ltd., Kokubunji-shi, Tokyo
MASUDA, H
NAKAI, M
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory. Hitachi Ltd., Kokubunji-shi, Tokyo
NAKAI, M
KUBO, M
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory. Hitachi Ltd., Kokubunji-shi, Tokyo
KUBO, M
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(06)
: 980
-
986
←
1
2
→