EFFECT OF OXIDE LAYERS ON THE DIFFUSION OF PHOSPHORUS INTO SILICON

被引：31
作者：
ALLEN, RB
BERNSTEIN, H
KURTZ, AD
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1960年 / 31卷 / 02期
关键词：
D O I：
10.1063/1.1735568
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：334 / 337
页数：4
相关论文
共 8 条
[1]  
ATALLA, 1959, BELL SYSTEM TECH J, V38, P749
[2]   EVALUATION OF THE SURFACE CONCENTRATION OF DIFFUSED LAYERS IN SILICON [J].
BACKENSTOSS, G .
BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (03) :699-710
[3]  
CARSLAW HS, 1959, CONDUCTION HEAT SOLI, P318
[4]   SURFACE PROTECTION AND SELECTIVE MASKING DURING DIFFUSION IN SILICON [J].
FROSCH, CJ ;
DERICK, L .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (09) :547-552
[5]   DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J].
FULLER, CS ;
DITZENBERGER, JA .
JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) :544-553
[6]  
Nomura K., COMMUNICATION
[7]  
SAH, 1959, B AM PHYS SOC 2, V4, P157
[8]   MEASUREMENT OF SHEET RESISTIVITIES WITH THE 4-POINT PROBE [J].
SMITS, FM .
BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (03) :711-718
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