MICROWAVE PERFORMANCE OF SOI N-MOSFETS AND COPLANAR WAVE-GUIDES

被引：30

作者：

CAVIGLIA, AL

POTTER, RC

WEST, LJ

机构：

[1] Aerospace Technology Center, Allied-Signal Aerospace Company, Columbia, MD

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 01期

关键词：

D O I：

10.1109/55.75687

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The microwave performance of 1-mu-m gate-length n-MOSFET's fabricated on both SIMOX and BESOI substrates has been measured. The process included a self-aligned silicide in an otherwise conventional MOS sequence. Initial optimization has yielded devices with an f(max) of 14 GHz on BESOI and 11 GHz on SIMOX. Coplanar waveguides (CPW's) were also fabricated on substrates with resistivities from 4 to 4000-OMEGA . cm. A loss of 1.8 dB/cm at 2 GHz was demonstrated on the 4000-OMEGA . cm float-zone substrate.

引用

页码：26 / 27

页数：2

共 6 条

[1]

CAVIGLIA AL, 1990, 4TH P INT S SIL INS, P524

[2] MICROSTRIP TRANSMISSION ON SEMICONDUCTOR DIELECTRICS [J].